Download Advances in Electronics and Electron Physics, Vol. 86 by Peter W. Hawkes (ed.) PDF

By Peter W. Hawkes (ed.)

This sequence covers a variety of themes, stretching from the particle optics of accelerators, mass spectrometers, electron and ion microscopes, and of person parts of those tools to theoretical and sensible features of recent electroinics. one other vast intterest is electronic photo processing and development popularity, together with the units hired and the tools built. Electron physics is interpreted very liberally and articles are usually integrated on fabrics of present curiosity in addition to at the units that hire them. the thing of the sequence is to supply articles which could evaluation a brand new or swiftly constructing box, or could hide a long time of study, therefore offering a small monograph on a selected topic. "Advances in Electronics and Electron Physics" quantity 86 beneficial properties articles at the following themes: GaAs semiconductor stories; photograph processing; N-beam calculators; and electron optics.

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Of more practical interest is the time constant to be expected if the area of the storage capacitor is reduced below the 62pm per side of the smallest capacitor shown. If we extrapolate the data in Fig. 5 sec at 101OC. This is still comfortably above our criterion of 100msec. Therefore it appears that adequate charge storage densities and acceptable storage times can be achieved with storage capacitors down to 5pm on a side. 4. Metal Evaporation Technique Since storage time is determined by extremely small generation currents, it is to be expected that it should be sensitive to certain details of the processing.

14 are indeed thermally activated, as required by (56), and the activation energies are consistent with generation sites at or very close to midgap (AETz 0). In considering the magnitudes of the storage times, we note that dynamic memories in silicon are typically refreshed at a 1 kHz rate, so that the storage times of individual cells must be longer than the refresh period of 1 msec. To take a conservative view, we shall require a storage time of at least 100msec 26 JAMES A. 2 lOOO/T(1/K) FIGUREIS.

The GaAs DCAM cell (Neudeck, 1991) is shown in Fig. 33. This cell consists of two JFET DRAM cells and four additional n-channel JFETs used to implement an exclusive-nor (XNOR) function. A unique feature of this design is the fact that an ohmic contact is established to the n-type region of the storage capacitor in each DRAM cell. This contact is connected to the gate of an n-channel JFET in the XNOR logic so that the contents of the cell can be compared with the new data on the bit lines. Altogether, six transistors and two storage capacitors are required per cell.

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